Bondwireless power module with three-dimensional current routing

ABSTRACT

According to an exemplary embodiment, a bondwireless power module includes a common output pad coupling an emitter/anode node of a high side device to a collector/cathode node of a low side device. The bondwireless power module also includes a high side conductive clip connecting a collector of the high side device to a cathode of the high side device, and causing current to traverse through the high side conductive clip to another high side conductive clip in another power module. The bondwireless power module further includes a low side conductive clip connecting an emitter of the low side device to an anode of the low side device, and causing current to traverse through the low side conductive clip to another low side conductive clip in the another power module. The bondwireless power module can be a motor drive inverter module.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention is generally in the field of semiconductors. More particularly, the invention relates to the packaging of semiconductor dies.

2. Background Art

A power module, such as a motor drive inverter, for example a three-phase inverter, can include at least one power switch that can be, for example, an insulated-gate bipolar transistor (IGBT) or a power metal-oxide-semiconductor field-effect transistor (MOSFET). As an example, an IGBT die can placed in the power module, and a diode die can be connected in parallel with the IGBT die as a freewheeling diode. Although the dies may be capable of high performance, performance of the motor drive inverter can be limited by how the dies are connected. For example, inductivity, electromagnetic interference (EMI), and parasitics are of great concern when connecting the motor drive inverter.

The motor drive inverter power module is typically formed by wire bonding the dies to conductive traces on a substrate of the power module to connect the dies. The design and layout of the motor drive inverter can be complex as the motor drive inverter may include many dies. For example, a three-phase motor drive inverter can include three IGBT dies as high side power switches, another three IGBT dies as low side power switches, and corresponding diode dies as freewheeling diodes for each IGBT die. As such, the conductive traces must often follow long routing paths on the substrate of the power module, and can have undesirably asymmetric current paths with high inductivity. Also, it can be difficult to make the conductive traces sufficiently wide due to the long routing paths required to connect the dies. Thus, performance of the motor drive inverter can suffer. Furthermore, the motor drive inverter may have a large footprint and poor power density.

Thus, there is a need in the art for the capability to form an improved power module, such as an improved motor drive inverter, while overcoming the drawbacks and deficiencies in the art.

SUMMARY OF THE INVENTION

A bondwireless power module with three-dimensional current routing, substantially as shown in and/or described in connection with at least one of the figures, and as set forth more completely in the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an exemplary schematic of a three-phase motor drive inverter circuit, according to one embodiment of the invention.

FIG. 2 illustrates a cross-sectional view of an exemplary high side device over a substrate used in a three-phase motor drive power module, according to one embodiment of the present invention.

FIG. 3A shows a top view of a bondwireless three-phase motor drive power module, in accordance with an embodiment of the present invention.

FIG. 3B shows a top view of a bondwireless three-phase motor drive power module, in accordance with an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is directed to a bondwireless power module with three-dimensional current routing. The following description contains specific information pertaining to the implementation of the present invention. One skilled in the art will recognize that the present invention may be implemented in a manner different from that specifically discussed in the present application. Moreover, some of the specific details of the invention are not discussed in order to not obscure the invention. The specific details not described in the present application are within the knowledge of a person of ordinary skill in the art.

The drawings in the present application and their accompanying detailed description are directed to merely exemplary embodiments of the invention. To maintain brevity, other embodiments of the invention that use the principles of the present invention are not specifically described in the present application and are not specifically illustrated by the present drawings.

FIG. 1 shows an exemplary schematic of three-phase motor drive inverter 100 (also referred to simply as a “motor drive inverter” in the present application), according to one embodiment of the invention. Motor drive inverter 100 comprises high side devices 102 a, 102 b, and 102 c and low side devices 102 d, 102 e, and 102 f, which are also referred to herein as devices, such as devices 102 a-102 f.

In the present embodiment, each of devices 102 a-102 f includes a freewheeling diode connected in parallel with a corresponding insulated-gate bipolar transistor (IGBT). For example, high side device 102 a includes IGBT 104 a and diode 106 a, high side device 102 b includes IGBT 104 b and diode 106 b, high side device 102 c includes IGBT 104 c and diode 106 c, low side device 102 d includes IGBT 104 d and diode 106 d, low side device 102 e includes IGBT 104 e and diode 106 e, and low side device 102 f includes IGBT 104 f and diode 106 f. Although devices 102 a-102 f each include an IGBT as a power switch, in some embodiments each of devices 102 a-102 f can include a different device, such as a power metal-oxide-semiconductor field-effect transistor (MOSFET). For example, in some embodiments a MOSFET replaces IGBT 104 a and diode 106 b can be a body diode of the MOSFET. Furthermore, in some embodiments devices 102 a-102 f may not include diodes 106 a-106 f or may include electrical components other than diodes 106 a-106 f.

Motor drive inverter 100 includes high side supply bus 108 and low side supply bus 110. High side supply bus 108 includes supply terminals V_(H1) and V_(H4) for connecting a high side supply voltage across high side supply bus 108. Low side supply bus 110 includes supply terminals V_(L1) and V_(L4) for connecting a low side supply voltage across low side supply bus 110.

In the present embodiment, motor drive inverter 100 is a three-phase motor drive inverter, which can be used to control a motor. In FIG. 1, a U phase of motor drive inverter 100 includes devices 102 a and 102 d connected in a half-bridge between high side supply bus 108 and, low side supply bus 110 with output terminal U_(out) connected between devices 102 a and 102 d. Similarly, a V phase of motor drive inverter 100 includes devices 102 b and 102 e connected in a half-bridge between high side supply bus 108 and low side supply bus 110 with output terminal V_(out) connected between devices 102 b and 102 e. Also, a W phase of motor drive inverter 100 includes devices 102 c and 102 f connected in a half-bridge between high side supply bus 108 and low side supply bus 110 with output terminal W_(out) connected between devices 102 c and 102 f.

Motor drive inverter 100 also includes high side gate terminals G_(H1), G_(H2), and G_(H3) and low side gate terminals G_(L1), G_(L2), and G_(L3) (also referred to herein as gate terminals G_(H1), G_(H2), G_(H3), G_(L1), G_(L2), and G_(L3)), which are each connected to a corresponding gate of one of IGBTs 102 a-102 f, as shown in FIG. 1. Gate terminals G_(H1), G_(H2), G_(H3), G_(L1), G_(L2), and G_(L3) can be used to selectively enable and disable IGBTs 102 a-102 f, as is known in the art.

FIG. 1 shows collector/cathode nodes 114 a, 114 b, 114 c, 114 d, 114 e, and 114 f and emitter/anode nodes 112 a, 112 b, 112 c, 112 d, 112 e, and 112 f. Collector/cathode nodes 114 a, 114 b, and 114 c are each connected to high side supply bus 108 and emitter/anode nodes 112 d, 112 e, and 112 f are each connected to low side supply bus 110. Also shown in FIG. 1, emitter/anode node 112 a is connected to collector/cathode node 114 d, emitter/anode node 112 b is connected to collector/cathode node 114 e, and emitter/anode node 112 c is connected to collector/cathode node 1141

Although the present embodiment is a three-phase motor drive inverter, other embodiments can include more or fewer phases. Furthermore, in some embodiments three-phase inverter 100 can be a circuit other than a motor drive inverter.

Motor drive inverter 100 can conventionally be implemented by electrically connecting dies over a substrate. For example, IGBTs 102 a-102 f and diodes 106 a-106 f can each be included in a respective die for a total of twelve discrete dies. Although the dies may be capable of high performance, performance of motor drive inverter 100 can be limited by how the dies are connected. In a conventional approach, motor drive inverter 100 is formed by wire bonding the dies to conductive traces formed on a substrate to connect the dies. Thus, conventional approaches utilize current routing in essentially two-dimensions on the substrate. However, using conventional approaches, the design and layout of motor drive inverter 100 is complex as motor drive inverter 100 may include, many dies, as well as numerous connections to and between the dies, as shown in FIG. 1. As such, the conductive traces must follow long routing paths on the substrate and may have undesirably asymmetric current paths as well as high inductivity. Also, it can be difficult to make the conductive traces sufficiently wide due to routing of the many conductive traces on the substrate. Thus, using conventional approaches, motor drive inverter 100 can have poor performance as well as a large footprint and poor power density.

Referring now to FIG. 2, FIG. 2 illustrates a cross-sectional view of exemplary high side device 202 a over substrate 216, according to one embodiment of the present invention. In FIG. 2, high side device 202 a corresponds to high side device 102 a in FIG. 1. High side device 202 a includes IGBT die 204 a and diode die 206 a corresponding respectively to IGBT 104 a and diode 106 a in FIG. 1. High side device 202 a also includes high side conductive clip 218 a (also referred to herein as conductive clip 218 a).

FIG. 2 shows high side device 202 a over substrate 216 and high side supply pads V_(H1) and V_(H2), high side gate pad G_(H1), and common output pad U_(out) situated on substrate 216. High side supply pads V_(H1) and V_(H2), high side gate pad G_(H1), and common output pad U_(out) each comprise conductive material, such as copper. In the present embodiment, high side supply pads V_(H1) and V_(H2), high side gate pad G_(H1), and common output pad U_(out) comprise conductive pads of a direct bonded copper (DBC) substrate. Substrate 216 can comprise for example, ceramic, or other substrate materials. Also, in some embodiments insulating material 232 and conductive material 234 can be included over conductive clip 218 a. For example, insulating material 232 can comprise ceramic, and conductive material 234 can comprise copper bonded to insulating material 232. Thus, IGBT die 204 a and diode die 206 a can be cooled from both the top and bottom surfaces thereof. It is noted that some embodiments may not include insulating material 232 and conductive material 234.

In FIG. 2, IGBT die 204 a is connected in parallel with diode die 206 a. Conductive clip 218 a connects collector 220 a of high side device 202 a to cathode 224 a of high side device 202 a. In the present embodiment, conductive clip 218 a is electrically connected to collector 220 a through a top surface of IGBT die 204 a and is electrically connected to cathode 224 a through a top surface of diode die 206 a. Conductive clip 218 a can comprise metal, such as copper, or other conductive material and is part of a high side supply bus corresponding to high side supply bus 108 in FIG. 1. Common output pad U_(out) electrically connects emitter 222 a of high side device 202 a and anode 226 a of high side device 202 a. Common output pad U_(out) is electrically connected to emitter 202 a through a bottom surface of IGBT die 204 a and is electrically connected to anode 226 a through a bottom surface of diode die 206 a. Thus, common output pad U_(out) is connecting an emitter/anode node of high side device 202 a corresponding to emitter/anode node 112 a in FIG. 1. Although not shown in FIG. 2, common output pad U_(out) is coupling the emitter/anode node of high side device 202 a to a collector/cathode node of a low side device, which can correspond to collector/cathode node 114 d of low side device 102 d in FIG. 1.

Also shown in FIG. 2, high side gate pad G_(H1) can correspond to high side gate terminal G_(H1) in FIG. 1. High side gate pad G_(H1) is electrically connected to gate 228 a of high side device 202 a. More particularly, high side gate pad G_(H1) is electrically connected to gate 228 a through a bottom surface of IGBT die 204 a.

In FIG. 2, conductive clip 218 a is connecting high side supply pads V_(H1) and V_(H2). More particularly, conductive clip 218 a is electrically connected to high side supply pad V_(H1) through leg 230 a and conductive clip 218 a is electrically connected to high side supply pad V_(H2) through leg 230 b. Thus, conductive clip 218 a and high side supply pads V_(H1) and V_(H2) include current path 236 such that current can traverse through conductive clip 218 a. In the present embodiment, current can traverse through conductive clip 218 a over common output pad U_(out), IGBT die 204 a, diode die 206 a, and high side gate electrode G_(H1). As such, current path 236 can be routed in three-dimensions over substrate 216. Also in the present embodiment, conductive clip 218 a causes current to traverse through conductive clip 218 a to another high side conductive clip in another power module, which is not shown in FIG. 2, but is electrically connected to high side supply pad V_(H2). By providing current path 236, the design and layout of a circuit, such as motor drive inverter 100, can be significantly simplified, even with many dies being connected over substrate 216.

In the present embodiment, high side device 202 a implements IGBT 104 a and diode 106 a of FIG. 1 in respective separate dies (i.e. IGBT die 204 a and diode die 206 a). However, in some embodiments diode 106 a is monolithically integrated with IGBT 104 a on a single die. In one embodiment, diode die 106 a is formed on the backside of the single die. The single die can be connected similar to IGBT die 204 a and diode die 206 a in FIG. 2. Furthermore, as described above, in some embodiments a MOSFET replaces IGBT 104 a. Thus, high side device 202 a can comprise the MOSFET in parallel with diode 106 a. As such, in some embodiments, IGBT die 204 a can be replaced with a MOSFET die connected similar to IGBT die 204 a. In one embodiment, diode 106 a can be a body diode of the MOSFET. In another embodiment, diode 106 a is not a body diode, but is monolithically integrated with the MOSFET on a single die. The single die can be connected similar to IGBT die 204 a and diode die 206 a in FIG. 2.

Although FIG. 2 illustrates high side device 202 a, corresponding to high side device 102 a in FIG. 1, high side devices 102 b and 102 c are similar to high side device 102 a and thus are not shown and described in FIG. 2 for brevity. Similarly, low side devices 102 d, 102 e, and 102 f are not shown and described for brevity.

Referring now to FIGS. 3A and 3B, FIGS. 3A and 3B show top views of bondwireless three-phase motor drive inverter module 300 (also referred to herein as a “motor drive inverter module” or a “three-phase motor drive power module” or the like), in accordance with an embodiment of the present invention. FIGS. 3A and 3B show substrate 316 corresponding to substrate 216 in FIG. 2. In FIG. 3A, high side devices 302 a, 302 b, and 302 c and low side devices 302 d, 302 e, and 302 f over substrate 316, correspond respectively to high side devices 102 a, 102 b, and 102 c and low side devices 102 d, 102 e, and 102 f in FIG. 1. Thus, in FIG. 3B, IGBT dies 304 a, 304 b, 304 c, 304 d, 304 e, and 304 f correspond respectively to IGBTs 104 a, 104 b, 104 c, 104 d, 104 e, and 104 f in FIG. 1 and diode dies 306 a, 306 b, 306 c, 306 d, 306 e, and 306 f correspond respectively to diodes 106 a, 106 b, 106 c, 106 d, 106 e, and 106 f in FIG. 1. As such, each of IGBT dies 304 a, 304 b, 304 c, 304 d, 304 e, and 304 f are connected in parallel with one of diode dies 306 a, 306 b, 306 c, 306 d, 306 e, and 306 f respectively.

In FIGS. 3A and 3B, three-phase motor drive inverter module 300 comprises a U-phase, a V-phase, and a W-phase. The U-phase comprises a power module including high side and low side devices 302 a and 302 d and conductive clips 318 a and 318 d. The V-phase comprises a power module including high side and low side devices 302 b and 302 e and conductive clips 318 b and 318 e. The W-phase comprises a power module including high side and low side devices 302 c and 302 f and conductive clips 318 c and 318 f. Although the present embodiment is a three-phase motor drive inverter module, other embodiments can include more or fewer phases. Furthermore, in some embodiments, power module 300 can comprise a circuit other than a motor drive inverter.

In FIGS. 3A and 3B, high side device 302 a corresponds to high side device 202 a in FIG. 2. More particularly, cross-section 2-2 in FIGS. 3A and 3B corresponds to the cross-sectional view shown in FIG. 2. Thus, high side conductive clip 318 a corresponds to high side conductive clip 218 a in FIG. 2. Furthermore, high side supply pads V_(H1) and V_(H2), high side gate pad G_(H1), and common output pad U_(out) correspond respectively to high side supply pads V_(H1) and V_(H2), high side gate pad G_(H1), and common output pad U_(out) in FIG. 2. Also, current path 336 corresponds to current path 236 in FIG. 2. It is noted that FIGS. 3A and 313 do not show features corresponding to insulating material 232 and conductive material 234 in FIG. 2, which are optional.

FIG. 3B shows a transparent top view of three-phase motor drive inverter module 300 to illustrate the layout of high side gate pads G_(H1), G_(H2) and G_(H3), low side gate pads G_(L1), G_(L2) and G_(L3), high side supply pads V_(H1), V_(H2), V_(H3) and V_(H4), low side supply pads V_(L2), V_(L3), and V_(L4), and common output pads U_(out), V_(out) and W_(out) on substrate 316. For example, high side supply pads V_(H1) and V_(H2) are each under and electrically connected to conductive clip 318 a in regions shown as overlapping conductive clip 318 a in FIG. 3B. In FIG. 2, these electrical connections are facilitated by legs 230 a and 230 b respectively.

FIG. 3B also shows IGBT die 304 a and diode die 306 a, which correspond to IGBT die 204 a and diode die 206 a in FIG. 2 and are under conductive clip 318 a. High side gate pad G_(H1) is under and electrically connected to IGBT die 302 a in a region shown as overlapping IGBT die 302 a in FIG. 3B. In FIG. 2, this electrical connection is shown to gate 228 a and is through the bottom surface of IGBT die 204 a. Similarly, common output pad U_(out) is under and electrically connected to IGBT die 304 a and diode die 306 a in a region shown as overlapping IGBT die 302 a and diode die 206 a in FIG. 3B. In FIG. 2, these electrical connections are shown respectively to emitter 222 a and anode 226 a through the respective bottom surfaces of IGBT die 204 a and diode die 206 a.

In the present embodiment, high side device 302 b is similar to high side device 302 a. For example, high side device 302 b is connected to high side gate pad G_(H2), high side supply pads V_(H2) and V_(H3), and common output pad V_(out) in a similar manner as shown and described with respect to high side device 302 a being connected respectively to high side gate pad G_(H1), high side supply pads V_(H1) and V_(H2), and common output pad U_(out) in FIGS. 2, 3A and 3B. Thus, for example, conductive clip 318 a is electrically connected to conductive clip 318 b through high side supply pad V_(H2). Furthermore, conductive clip 318 b causes current to traverse through conductive clip 318 b over common output pad V_(out).

Also, high side device 302 c is similar to high side devices 302 a and 302 b. For example, high side device 302 c is connected to high side gate pad G_(H3), high side supply pads V_(H3) and V_(H4), and common output pad W_(out) in a similar manner as shown and described with respect to high side device 302 a being connected respectively to high side gate pad G_(H1), high side supply pads V_(H1) and V_(H2), and common output pad U_(out) in FIGS. 2, 3A and 3B. Thus, for example, conductive clip 318 b is electrically connected to conductive clip 318 c through high side supply pad V_(H3). Furthermore, conductive clip 318 c causes current to traverse through conductive clip 318 c over common output pad W_(out).

Also in the present embodiment, low side device 302 d is connected to low side gate pad G_(L1), low side supply pads V_(L1) and V_(L2), and common output pad U_(out) in a similar manner as described with respect to high side device 302 a being connected respectively to high side gate pad G_(H1), high side supply pads V_(H1) and V_(H2), and common output pad U_(out) in FIGS. 2, 3A and 3B. Thus, conductive clip 318 d causes current to traverse through conductive clip 318 d over common output pad U_(out). However, with respect to low side device 302 d, common output pad U_(out) is electrically connected to a collector/cathode node of low side device 302 d rather than an emitter/anode node as described with respect to high side device 302 a. The collector/cathode node corresponds to collector/cathode node 114 d in FIG. 1. Also, conductive clip 318 d is connecting an emitter of low side device 302 d to an anode of low side device 302 d as opposed to conductive clip 318 a, which is connecting a collector of high side device 302 a to a cathode of high side device 302 a. In some embodiments, the above described connections can be achieved by connecting common output pad U_(out) to a collector and a cathode of low side device 302 d through a respective bottom surface of IGBT die 304 d and diode die 306 d and connecting conductive clip 318 d to an emitter and an anode of low side device 302 d through a respective top surface of IGBT die 304 d and diode die 306 d. Thus, common output pad U_(out) is coupling an emitter/anode node of high side device 302 a to a collector/cathode node of low side device 302 d and is under both high side and low side conductive clips 318 a and 318 d.

Furthermore, in the present embodiment, low side devices 302 e and 302 f are each similar to low side device 302 d. For example, low side device 302 e is connected to low side gate pad G_(L2), low side supply pads V_(L2) and V_(L3), and common output pad V_(out) in a similar manner as described with respect to low side device 302 d being connected respectively to low side gate pad G_(L1), low side supply pads V_(L1) and V_(L2), and common output pad U_(out). Thus, for example, conductive clip 318 d is electrically connected to conductive clip 318 e through low side supply pad V_(L2). Furthermore, conductive clip 318 e causes current to traverse through conductive clip 318 e over common output pad V_(out).

Also, low side device 302 f is connected to low side gate pad G_(L3), low side supply pads V_(L3) and V_(L4), and common output pad W_(out) in a similar manner as described with respect to low side device 302 d being connected respectively to low side gate pad G_(L1), low side supply pads V_(L1) and V_(L2), and common output pad U_(out). Thus, for example, conductive clip 318 e is electrically connected to conductive clip 318 f through low side supply pad V_(L3). Furthermore, conductive clip 318 f causes current to traverse through conductive clip 318 f over common output pad W_(out).

Common output pads U_(out), V_(out), and W_(out) can correspond respectively to output terminals U_(out), V_(out), and W_(out) in FIG. 1. Thus, in three-phase motor drive inverter module 300, common output pad U_(out) is coupling an emitter/anode node of high side device 302 a to a collector/cathode node of low side device 302 d. The emitter/anode node can correspond to emitter/anode node 112 a and the collector/cathode node can correspond to collector/cathode node 114 d in FIG. 1. Also, common output pad V_(out) is coupling an emitter/anode node of high side device 302 b to a collector/cathode node of low side device 302 e. The emitter/anode node can correspond to emitter/anode node 112 c and the collector/cathode node can correspond to collector/cathode node 114 e in FIG. 1. Furthermore, common output pad W_(out) is coupling an emitter/anode node of high side device 302 c to a collector/cathode node of low side device 302 f. The emitter/anode node can correspond to emitter/anode node 112 c and the collector/cathode node can correspond to collector/cathode node 114 f in FIG. 1. In the present embodiment, each of common output pads U_(out), V_(out), and W_(out) are contiguous pads over substrate 316 and in some embodiments can be respective contiguous pads of a direct bonded copper (DBC) substrate.

Also in the present embodiment, high side conductive clip 318 a is connecting a collector of high side device 302 a to a cathode of high side device 302 a, and causing current to traverse through high side conductive clip 318 a to high side conductive clip 318 b in another power module comprising high side device 302 b and low side device 302 e. Similarly, high side conductive clip 318 b is connecting a collector of high side device 302 b to a cathode of high side device 302 b, and causing current to traverse through high side conductive clip 318 b to high side conductive clip 318 c in another power module comprising high side device 302 c and low side device 302 f. Thus, current path 336 can extend from high side supply pad V_(H1) to high side supply pad V_(H4), which can correspond respectively to high side supply terminals V_(H1) and V_(H4) of high side supply bus 108 in FIG. 1. As such, each of high side conductive clips 302 a, 302 b, and 302 c can be part of a high side supply bus having a wide current path with low inductance.

Also in three-phase motor drive inverter module 300, low side conductive clip 318 d is connecting an emitter of low side device 318 d to an anode of low side device 318 d, and causing current to traverse through low side conductive clip 318 d to low side conductive clip 318 e in the another power module comprising high side device 302 b and low side device 302 e. Furthermore, low side conductive clip 318 e is connecting an emitter of low side device 318 e to an anode of low side device 318 e, and causing current to traverse through low side conductive clip 318 e to low side conductive clip 318 f in the another power module comprising high side device 302 c and low side device 302 f. Thus, current path 338 can extend from low side supply pad V_(L1) to low side supply pad V_(L4), which can correspond respectively to low side supply terminals V_(L1) and V_(L4) of low side supply bus 110 in FIG. 1. As such, each of low side conductive clips 302 d, 302 e, and 302F can be part of a high side supply bus a wide current path with low inductance.

Thus, devices 302 a and 302 d can be connected in a half-bridge between high side and low side supply buses as a U-Phase of three-phase motor drive inverter module 300. Also, devices 302 b and 302 e can be connected in a half-bridge between high side and low side supply buses as a V-Phase of three-phase motor drive inverter module 300. Furthermore, devices 302 c and 302 f can be connected in a half-bridge between high side and low side supply buses as a W-Phase of three-phase motor drive inverter module 300.

Thus, as discussed above, in the embodiments of FIGS. 1 through 3B, the present invention can provide for a bondwireless power module, such as a bondwireless three-phase motor drive inverter module. Various embodiments of the present invention include a high side conductive clip connecting a collector of a high side device to a cathode of a high side device and a low side conductive clip connecting an emitter of a low side device to an anode of a low side device. As illustrated above, the high side and low side conductive clips can each cause current to traverse, in a three-dimensional manner, to another respective high side and low side conductive clip in another power module. For example, current can traverse over a common output pad of the power module. Thus, the power module can be formed without bond wires and can be significantly simplified, even with many dies being connected and with numerous connections to and between the dies. Furthermore, conductive pads can be used to provide current paths that are wide, symmetrical, and have low inductivity. Thus, the power module can have high performance as well as a small footprint and high power density.

From the above description of the invention it is manifest that various techniques can be used for implementing the concepts of the present invention without departing from its scope. Moreover, while the invention has been described with specific reference to certain embodiments, a person of ordinary skill in the art would appreciate that changes can be made in form and detail without departing from the spirit and the scope of the invention. Thus, the described embodiments are to be considered in all respects as illustrative and not restrictive. It should also be understood that the invention is not limited to the particular embodiments described herein but is capable of many rearrangements, modifications, and substitutions without departing from the scope of the invention. 

1. A bondwireless power module comprising: a common output pad coupling an emitter/anode node of a high side device to a collector/cathode node of a low side device; a high side conductive clip connecting a collector of said high side device to a cathode of said high side device, and causing current to traverse through said high side conductive clip to another high side conductive clip in another power module; a low side conductive clip connecting an emitter of said low side device to an anode of said low side device, and causing current to traverse through said low side conductive clip to another low side conductive clip in said another power module.
 2. The bondwireless power module of claim 1, wherein said bondwireless power module is a motor drive inverter module.
 3. The bondwireless power module of claim 1, wherein said high side device comprises an IGBT in parallel with a diode.
 4. The bondwireless power module of claim 1, wherein said low side device comprises an IGBT in parallel with a diode.
 5. The bondwireless power module of claim 1, wherein said common output pad is situated under said high side and low side conductive clips.
 6. The bondwireless power module of claim 1, wherein said high side conductive clip is part of a high side supply bus.
 7. The bondwireless power module of claim 1, wherein said high side conductive clip causes current to traverse through said high side conductive clip and over said common output pad.
 8. The bondwireless power module of claim 1, wherein said common output pad is situated on a direct bonded copper (DBC) substrate.
 9. The bondwireless power module of claim 1, wherein said low side conductive clip causes current to traverse through said low side conductive clip and over said common output pad.
 10. The bondwireless power module of claim 1, wherein said high side device and said low side device are connected in a half-bridge between a high side supply bus and a low side supply bus.
 11. The bondwireless power module of claim 1, wherein said high side conductive clip is connected to said another high side conductive clip through a high side supply pad.
 12. A bondwireless three-phase motor drive inverter module comprising: a U-phase, a V-phase, and a W-phase each including a respective common output pad coupling an emitter/anode node of a high side device to a collector/cathode node of a low side device, a high side conductive clip connecting a collector of said high side device to a cathode of said high side device, and a low side conductive clip connecting an emitter of said low side device to an anode of said low side device; said high side conductive clip of said U-phase causing current to traverse through said high side conductive clip of said U-phase to said high side conductive clip of said V-phase; said low side conductive clip of said U-phase causing current to traverse through said low side conductive clip of said U-phase to said low side conductive clip of said V-phase.
 13. The bondwireless three-phase motor drive inverter module of claim 12, wherein said high side conductive clip of said V-phase causes current to traverse through said high side conductive clip of said V-phase to said high side conductive clip of said W-phase.
 14. The bondwireless three-phase motor drive inverter module of claim 12, wherein said low side conductive clip of said V-phase causes current to traverse through said low side conductive clip of said V-phase to said low side conductive clip of said W-phase.
 15. The bondwireless three-phase motor drive inverter module of claim 12, wherein said high side device comprises an IGBT in parallel with a diode.
 16. The bondwireless three-phase motor drive inverter module of claim 12, wherein said low side device comprises an IGBT in parallel with a diode.
 17. The bondwireless three-phase motor drive inverter module of claim 12, wherein said high side device comprises a IGBT in parallel with a diode, said diode being monolithically integrated with said IGBT on a single die.
 18. The bondwireless three-phase motor drive inverter module of claim 12, wherein said high side device comprises a IGBT in parallel with a diode, said diode being monolithically integrated with said IGBT on a single die and formed on a backside of said single die.
 19. The bondwireless three-phase motor drive inverter module of claim 12, wherein said high side device comprises a MOSFET in parallel with a diode, said diode being monolithically integrated with said MOSFET on a single die.
 20. The bondwireless three-phase motor drive inverter module of claim 12, wherein said high side device comprises a MOSFET in parallel with a diode, said diode being a body diode of said MOSFET.
 21. The bondwireless three-phase motor drive inverter module of claim 12, wherein said high side conductive clip is part of a high side supply bus.
 22. The bondwireless three-phase motor drive inverter module of claim 12, wherein said low side conductive clip is part of a low side supply bus.
 23. The bondwireless three-phase motor drive inverter module of claim 12, wherein said high side conductive clip causes current to traverse through said high side conductive clip and over said common output pad.
 24. The bondwireless three-phase motor drive inverter module of claim 12, wherein said low side conductive clip causes current to traverse through said low side conductive clip and over said common output pad. 